LabSensNano - Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth


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Our projects:

   GJ18-06498Y
   TH 02020926 (MOCVD)
   GAČR GA17-27340S
   LQ1601 (CEITEC 2020)
   TG01010054 - TAČR GAMA (VUT Šance)
   LO1401 (INWITE)
   VI20152019043
   CZ.1.05/2.1.00/03.0072 (SIX)
   4SGA8678 (NanoApp)
   GAČR 13-2030P
   TA01010088 (NanoCeva)
   GAČR GA14-29531S
   MD.SFPP 984511
   GAČR GA13-19947S
   GAČR GA13-18219S
   CZ.1.07/2.3.00/30.0005
   CZ.1.05/1.1.00/02.0068 (CEITEC)
   GAP102/11/1068 (NanoBioTECell)
   GAČR 205/10/1374


	Experimental development of MOCVD apparatus for high temperature growth of A(III)B(V) semiconductors and applied research of metal-nitrides epitaxial thin film growth Identification: TH 02020926 (MOCVD) Project start: 2017.01.01 Project end: 2019.12.31

Brno University of Technology
Faculty of Electrical Engineering and Communication
Department of Microelectronics | Technická 3058/10 | 616 00 Brno | Czech Republic
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